| PART |
Description |
Maker |
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| CAT28LV256 CAT28LV256N-20T CAT28LV256N-25T CAT28LV |
256K-bit CMOS parallel EEPROM 250ns
256K-bit CMOS parallel EEPROM 200ns
256K-bit CMOS parallel EEPROM 300ns
256K-Bit CMOS PARALLEL E2PROM
128Kx8 EEPROM 128Kx8 EEPROM
32K X 8 EEPROM 3V, 200 ns, PQCC32
|
http://
CATALYST[Catalyst Semiconductor]
Intersil, Corp.
Epson (China) Co., Ltd.
STMicroelectronics N.V.
ON SEMICONDUCTOR
|
| 29F022B-90 29F022T-12 29F022T-55 29F022T-90 29F022 |
2M-BIT[256K x 8]CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存
|
Macronix International Co., Ltd.
|
| KM641001B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MCM6929A MCM6929AWJ10 MCM6929AWJ10R MCM6929AWJ12 M |
256K x 4 Bit Fast Static Random Access Memory 256K X 4 STANDARD SRAM, 10 ns, PDSO32
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA INC
|
| K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| PDM41257SA7SOTY PDM41257SA7SOTR PDM41257LA7SOTY PD |
256K static RAM 256K x 1-bit
x1 SRAM
|
PARADIGM
|
| MX29LV400CBXHI-70Q MX29LV400CTXHI-70Q 29LV400C-90 |
4分位[12k × 8 / 256K × 16] CMOS单电V时仅闪存
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO44
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 55 ns, PDSO48
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO48
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 55 ns, PBGA48
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Macronix International Co., Ltd.
PROM
MACRONIX INTERNATIONAL CO LTD
|
| AT49F4096-90TI AT49F4096-90TC AT49F4096-90RC AT49F |
Quadruple 2-Input Exclusive-OR Gates 14-SSOP -40 to 85
4 Megabit 256K x 16 5-volt Only CMOS Flash Memory 256K X 16 FLASH 5V PROM, 90 ns, PDSO44
Dual 16-Bit Binary Counters with 3-State Output Registers 20-TSSOP -40 to 85 256K X 16 FLASH 5V PROM, 120 ns, PDSO44
|
Atmel Corp.
Atmel, Corp.
|
| HYB314171BJL-70 HYB314171BJL-60 HYB314171BJL-50 HY |
256k x 16 Bit FPM DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
256k x 16 Bit FPM DRAM 3.3 V 70 ns
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| K3N3C6000D-DC K3N3C6000D-DC10 |
256K X 16 MASK PROM, 100 ns, PDIP40
4M-Bit (256K x 16) CMOS MASK ROM(EPROM TYPE) Data Sheet
|
Samsung Electronic
|
